Solution to Set 6: Difference between revisions

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==Problem 2==
==Problem 2==


The resistivity of a certain material at room temperature is 0.02 Wm and the Hall coefficient is <math>5{\rm x}10^{-4}</math> <math>m^3 /C</math>. An electric field of 1 V/m is applied across it. Deduce all the information you can think of about this material.  
[[Image:Detective.gif]]


The resistivity of a certain material at room temperature is 0.02 Wm and the Hall coefficient is <math>5{\rm x}10^{-4}</math> <math>m^3 /C</math>. An electric field of 1 V/m is applied across it. Deduce all the information you can think of about this material.
===Given===
* Temperature <math>T = 20 ^{\circ} \textup{C}</math>
* Resistivity <math>\rho = 0.02 \Omega \cdot m</math>
* Hall coefficient <math>R_{H} = 5{\rm x}10^{-4}</math> <math>m^3 /C</math>
* Electric field <math>E = 1 \tfrac{V}{m}</math>
===Deduction===


==Problem 3.==
==Problem 3.==

Revision as of 01:10, 9 April 2009

Problem 1.

Given

Aluminum(Al) is trivalent with

  • atomic mass amu
  • density
  • room temperature
  • mean free time between electron collisions s.

(a) Resistivity

Calculate the resistivity of aluminum(Al) at room temperature.

Ω·m

(b) Current

If a 2-V voltage is applied to the ends of an aluminum wire 10 m long and with a cross- sectional area of , what is the current flowing through it?

Problem 2

Detective.gif

The resistivity of a certain material at room temperature is 0.02 Wm and the Hall coefficient is . An electric field of 1 V/m is applied across it. Deduce all the information you can think of about this material.

Given

  • Temperature Failed to parse (unknown function "\textup"): {\displaystyle T = 20 ^{\circ} \textup{C}}
  • Resistivity
  • Hall coefficient
  • Electric field

Deduction

Problem 3.

a) Sketch a setup used to measure the Hall effect. Label each part.

Hall Effect.jpg

b) A semiconductor crystal is 5 mm long, 4 mm wide, and 2 mm thick. A 40mA current flows across the length of the sample after a 2-V battery is connected to the ends. When a 0.1T magnetic field is applied perpendicular to the large surface of the specimen, a Hall voltage of 15mV develops across the width of the sample. Determine the i) conductivity, ii) carrier density, iii) mobility, iv) Fermi velocity, for this semiconductor.

Problem 4

a) Derive the expressions for the Fermi energy, Fermi velocity, and electronic density of states for a two-dimensional free electron gas.

b) A 2D electron gas formed in a GaAs/AlGaAs quantum well has a density of . Assuming that the electrons there have the free electron mass, calculate the Fermi energy and Fermi velocity.